Woodhead Publishing Series in Electronic and Optical Materials
3 total works
Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology.
The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.
The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.
GaN Transistor Modeling for RF and Power Electronics
by Yogesh Singh Chauhan, Sheikh Aamir Ahsan, Ahtisham Ul Haq Pampori, and Raghvendra Dangi
Published 1 January 2023
The aim of GaN Transistor Modeling for RF and Power Electronics is to cover all aspects of characterization and modelling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects including trapping, self-heating, field plate effects etc to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results.
GaN is the fastest emerging technology for RF circuits as well as Power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology especially for circuit designers, materials science and device engineers as well as academic researchers and students.
GaN is the fastest emerging technology for RF circuits as well as Power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology especially for circuit designers, materials science and device engineers as well as academic researchers and students.
BSIM-Bulk Mosfet Model for Wireless and Mixed-Mode ICS
by Chenming Hu, Harshit Agarwal, Chetan Gupta, and Yogesh Singh Chauhan
Published 1 February 2023
BSIM-BULK compact model is the most recent industry standard model of the MOS transistor. It is used by the semiconductor industry as well as academicians and researchers for designing analog, RF, and logic circuits. While the model is commercially integrated into all major integrated circuit simulators, literature on model derivation, physical and numerical approximations are limited.
In BSIM-BULK, the developers provide in-depth knowledge of the internal operation of the model. The authors not only discuss the fundamental core of the model, but also provide details of the recent developments and new real-device effect models. In addition, the book covers the parameter extraction procedures addressing geometrical scaling, temperatures, etc. There is a dedicated chapter on extensive quality testing procedures and experimental results.
Those working in the semiconductor industry often run into variety of problems like model non-convergence or non-physical simulation results. This is largely due to limited understanding of the internal operations of the model as the literature in the form of technical manuals are insufficient. This also creates huge difficulty in developing their own IP models. Similarly, circuit designers and researcher across the globe need to know new features available to them so that the circuits can be more efficiently designed. BSIM-BULK discusses every aspect of the model in detail, and hence will be of significant use for the industry and academia.
In BSIM-BULK, the developers provide in-depth knowledge of the internal operation of the model. The authors not only discuss the fundamental core of the model, but also provide details of the recent developments and new real-device effect models. In addition, the book covers the parameter extraction procedures addressing geometrical scaling, temperatures, etc. There is a dedicated chapter on extensive quality testing procedures and experimental results.
Those working in the semiconductor industry often run into variety of problems like model non-convergence or non-physical simulation results. This is largely due to limited understanding of the internal operations of the model as the literature in the form of technical manuals are insufficient. This also creates huge difficulty in developing their own IP models. Similarly, circuit designers and researcher across the globe need to know new features available to them so that the circuits can be more efficiently designed. BSIM-BULK discusses every aspect of the model in detail, and hence will be of significant use for the industry and academia.