Raghvendra Dangi is a research scholar at the Indian Institute of Technology Kanpur (IIT Kanpur), He is one of the co-developers of an industry standard model of ASM-HEMT for AlGaN/GaN HEMTs. He received the master’s degree in VLSI design from the Visvesvaraya National Institute of Technology, Nagpur. His research involves the characterization and modeling of AlGaN/GaN HEMT devices.
