The aim of GaN Transistor Modeling for RF and Power Electronics is to cover all aspects of characterization and modelling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects including trapping, self-heating, field plate effects etc to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results.
GaN is the fastest emerging technology for RF circuits as well as Power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology especially for circuit designers, materials science and device engineers as well as academic researchers and students.
- ISBN13 9780323998710
- Publish Date 1 January 2023
- Publish Status Forthcoming
- Publish Country US
- Imprint Woodhead Publishing
- Format Paperback
- Pages 425
- Language English