European Materials Research Society Symposia Proceedings
3 total works
Light Emission from Silicon: Progress Towards Si-Based Optoelectronics
by J. Linnros, F Priolo, and L T Canham
Published 1 May 1999
New Trends in Ion Beam Processing of Materials and Beam Induced Nanometric Phenomena
by J.K.N. Lindner, A. Nylandsted Larsen, J.M. Poate, E.E.B. Campbell, R Kelly, G. Marletta, M. Toulemonde, and F Priolo
Published 18 December 1997
Part I of this book is dedicated to the proceedings of symposium
I of the EMRS 1996 Spring Meeting.This Symposium on "New
Trends in Ion Beam Processing of Materials" was held in
Strasbourg (France) from the 4th to the 7th of June 1996. Ion-
beam processing represents a particularly powerful tool to modify
and synthesise materials such as semiconductors, metals,
dielectrics, and ceramics, In particular, the continuous
development of the semiconductor industry, with the consequent
shrinkage of device dimensions, is placing severe constraints on
ion-beam processing with demands for keV and meV energy beams,
high doses, and unprecedented control over contamination, beam
purity, and divergence. These requirements are posing new
challenges to the ion-beam community, ranging from fundamental
processes (such as defect generation, defect-defect interactions,
phase transitions) to engineering (such as process control and
novel equipment).The aim of this Symposium was to provide an
international forum for the presentation and discussion of new
work in the field of ion-beam processing. More than a hundred
papers were presented by scientists from all over the world.
particular emphasis was given to new trends in ion-beam
processing of semiconductors and to the current challenges faced
by microelectronic device manufacturing. The fields of transient-
enhanced diffusion, gettering, optoelectronic applications, group
IV hetero epitaxy, damage, annealing, and synthesis were treated
in detail. The interaction between the semiconductor and other
communities is important for the development of new concepts and
presentations in the field of metals, insulators, and new
techniques (such as plasma-immersion ion implantation) were
extremely interesting.Part II is dedicated to the proceedings
of symposium K. This symposium has focused on modifications of
the structure and properties of materials which are induced by
several kinds of irradiations: on the one hand high
energy deposited in the electrons which relax their energy to the
lattice (fs lasers, heavy ions in the GeV energy range, cluster
beams in the MeV range) and on the other hand energy deposited
directly on the lattice atoms (heavy ions and cluster beams in
the keV energy range). The idea was to emphasize the link between
the material modifications on a nanometric scale and the energy
input on the fs time scale from both the experimental and
theoretical point of view. To reach these goals our attention was
focused on single event effects: single fs laser shots, single
ion and cluster tracks (low and high energy).
I of the EMRS 1996 Spring Meeting.This Symposium on "New
Trends in Ion Beam Processing of Materials" was held in
Strasbourg (France) from the 4th to the 7th of June 1996. Ion-
beam processing represents a particularly powerful tool to modify
and synthesise materials such as semiconductors, metals,
dielectrics, and ceramics, In particular, the continuous
development of the semiconductor industry, with the consequent
shrinkage of device dimensions, is placing severe constraints on
ion-beam processing with demands for keV and meV energy beams,
high doses, and unprecedented control over contamination, beam
purity, and divergence. These requirements are posing new
challenges to the ion-beam community, ranging from fundamental
processes (such as defect generation, defect-defect interactions,
phase transitions) to engineering (such as process control and
novel equipment).The aim of this Symposium was to provide an
international forum for the presentation and discussion of new
work in the field of ion-beam processing. More than a hundred
papers were presented by scientists from all over the world.
particular emphasis was given to new trends in ion-beam
processing of semiconductors and to the current challenges faced
by microelectronic device manufacturing. The fields of transient-
enhanced diffusion, gettering, optoelectronic applications, group
IV hetero epitaxy, damage, annealing, and synthesis were treated
in detail. The interaction between the semiconductor and other
communities is important for the development of new concepts and
presentations in the field of metals, insulators, and new
techniques (such as plasma-immersion ion implantation) were
extremely interesting.Part II is dedicated to the proceedings
of symposium K. This symposium has focused on modifications of
the structure and properties of materials which are induced by
several kinds of irradiations: on the one hand high
energy deposited in the electrons which relax their energy to the
lattice (fs lasers, heavy ions in the GeV energy range, cluster
beams in the MeV range) and on the other hand energy deposited
directly on the lattice atoms (heavy ions and cluster beams in
the keV energy range). The idea was to emphasize the link between
the material modifications on a nanometric scale and the energy
input on the fs time scale from both the experimental and
theoretical point of view. To reach these goals our attention was
focused on single event effects: single fs laser shots, single
ion and cluster tracks (low and high energy).
New Developments in Porous Silicon: Relation with Other Nanostructured Porous Materials
by L T Canham and D. Bellet
Published 18 December 1997
The symposium entitled "New Developments in Porous Silicon. Relation with Other Nanostructured Porous Materials" took place in Strasbourg on 4-7 June 1996 hosted by the EMRS Society. Its objectives were to assess the recent developments in porous silicon research and make the 'porous Si community' more aware of related porous materials.The 71 papers contained in these proceedings account for about 80% of the work presented at the meeting and cover nine different topic areas.Chapter 1 focuses on some recent advances in porous Si fabrication and a new formation mechanism involving specific point defects, extensions to the basic anodization process for preparing macropore arrays, multilayers as well as both thin and thick high porosity layers and the realisation of luminescent porous structures from device quality -Si:H material.Controlled chemical modification of the internal surface of porous Si, an important emerging technique for both stabilising, understanding and introducing new functionality into the properties of the material is discussed in chapter 2 along with the new and exciting developments taking place in the nanocomposites area.The papers in chapter 3 discuss photochemical effects, properties of 'wet' and 'dry' porous Si layers and new approaches to characterising 'wet' material along with an important highlight of the symposium - blue emission in oxide-free layers.Chapter 4 covers many new developments and the refining of existing techniques regarding characterising porous Si and chapter 5 reviews the luminescent silicon nanostructures that have been fabricated other than anodization.The presentation of various porous materials and overviews on the fabrication characterisation and applications of porous alumina are covered in chapter 6, and chapter 7 focuses on the growing interest in porous Si multilayer structures and the potential for realising practical SiLEDs with chapter 8 covering the work that has been presented in this field.New applications for porous Si materials which has an enormous world-wide interest is discussed in the final chapter of the proceedings.