This work provides a comprehensive discussion of the bias dependence of equivalent circuit parameters for the three devices and an extensive discussion of temperature dependence. It: covers recess-etched MESFETs and self-aligned MESFETs with and without lightly-doped-drains and JFETs; analyzes GaAs-based pHEMTS and InP lattice-matched HEMT equivalent circuits; and describes a large-signal, temperature-dependent model extractor for A1GaAs-GaAs HBTs. The book is intended for circuit designers, process and device developers and test engineers.
- ISBN10 089006749X
- ISBN13 9780890067499
- Publish Date 30 November 1994
- Publish Status Active
- Publish Country US
- Imprint Artech House Publishers
- Format Hardcover
- Pages 324
- Language English