This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
- ISBN13 9783319315706
- Publish Date 11 July 2016
- Publish Status Active
- Publish Country CH
- Imprint Springer International Publishing AG
- Edition 1st ed. 2016
- Format Paperback
- Pages 93
- Language English