This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.
- ISBN10 9814241083
- ISBN13 9789814241083
- Publish Date 28 February 2010 (first published 28 April 2008)
- Publish Status Active
- Publish Country SG
- Imprint Pan Stanford Publishing Pte Ltd
- Format Hardcover
- Pages 350
- Language English