The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling.
The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
- ISBN10 1280625090
- ISBN13 9781280625091
- Publish Date 1 January 2006
- Publish Status Active
- Out of Print 25 March 2015
- Publish Country US
- Imprint Springer
- Pages 293
- Language English