Operation and Modelling of the Metal-oxide Semiconductor Transistor

by Yannis P Tsividis

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Operation end Modeling of the MOS Transistor, 2/e carefully leads from physical principles to relevant working models of the MOS Transistors device. Models range from the very simple to sophisticated with the connections between models of successive levels clearly identified. Intuitive understanding is provided through extensive discussions.
  • ISBN10 0070655235
  • ISBN13 9780070655232
  • Publish Date 1 September 1998 (first published 1 March 1987)
  • Publish Status Out of Print
  • Out of Print 4 April 2008
  • Publish Country US
  • Publisher McGraw-Hill Education - Europe
  • Imprint McGraw-Hill Inc.,US
  • Edition 2nd Revised edition
  • Format Hardcover
  • Pages 480
  • Language English