This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
- ISBN10 0367573555
- ISBN13 9780367573553
- Publish Date 30 June 2020 (first published 6 June 2017)
- Publish Status Active
- Publish Country GB
- Publisher Taylor & Francis Ltd
- Imprint CRC Press
- Format Paperback
- Pages 138
- Language English