Book 0

This book is a sequel of The Physics of Quantum Well Infrared Photodetectors (1997), which covered the basic physics of QWIPs. In this intervening 25 years, QWIP properties pertinent to infrared detection are much better understood, and QWIP technology has become a mainstream infrared technology. The main progress is the ability to know the QWIP absorption quantum efficiency quantitatively through rigorous electromagnetic modeling. The lack of theoretical prediction has impeded QWIP development for a long time. Generally, an arbitrary choice of detector structures will yield substantial variations of absorption properties, and QWIP was regarded as a low quantum efficiency detector. With the advent of electromagnetic modeling, quantum efficiency of any detector geometry can be known exactly and be optimized to attain a large satisfactory value. Consequently, all properties of QWIPs are predictable, not unlike prevailing silicon devices. This unique characteristic enables QWIP to be the most manufacturable long wavelength infrared technology in mass production. This book by K K Choi, a co-inventor of QWIPs, will capture this exciting development.Based on the materials expounded in the book, the reader will know key performance metrics in infrared detection, in-depth knowledge of QWIP material and structural designs and array production, its application, and practical knowledge of electromagnetic modeling. In addition, the book will describe using micro- and nano-structures to enhance the emission properties of active and passive optical emitters, similar to detectors. The application of rigorous electromagnetic modeling to optical emitters is new to the optoelectronic community. The resonator-pixel emitter structure with its modeling method will no doubt be able to attract substantial academic and industrial attention in years to come.

Book 7

In the past, infrared imaging has been used exclusively for military applications. In fact, it can also be useful in a wide range of scientific and commercial applications. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost. Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors. With the new technology, these impedances can be eliminated and a new era of infrared imaging is in sight. This book is designed to give a systematic description on the underlying physics of the new detectors and other issues related to infrared imaging.