Optics and Photonics
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This book covers the device physics of semiconductor lasers in five chapters written by recognized experts in this field. The volume begins by introducing the basic mechanisms of optical gain in semiconductors and the role of quantum confinement in modern quantum well diode lasers. Subsequent chapters treat the effects of built-in strain, one of the important recent advances in the technology of these lasers, and the physical mechanisms underlying the dynamics and high speed modulation of these devices. The book concludes with chapters addressing the control of photon states in squeezed-light and microcavity structures, and electron states in low dimensional quantum wire and quantum dot lasers.
The book offers useful information for both readers unfamiliar with semiconductor lasers, through the introductory parts of each chapter, as well as a state-of-the-art discussion of some of the most advanced semiconductor laser structures, intended for readers engaged in research in this field. This book may also serve as an introduction for the companion volume, Semiconductor Lasers II: Materials and Structures, which presents further details on the different material systems and laser structures used for achieving specific diode laser performance features.
The book offers useful information for both readers unfamiliar with semiconductor lasers, through the introductory parts of each chapter, as well as a state-of-the-art discussion of some of the most advanced semiconductor laser structures, intended for readers engaged in research in this field. This book may also serve as an introduction for the companion volume, Semiconductor Lasers II: Materials and Structures, which presents further details on the different material systems and laser structures used for achieving specific diode laser performance features.
This volume presents state-of-the-art information on several important material systems and device structures employed in modern semiconductor lasers. The first two chapters discuss several III-V, II-VI, and VI-VI compound semiconductor material systems employed in diode lasers whose emission spectra cover the range from the blue to the mid-infrared. Subsequent chapters describe the elaboration of special laser structures designed for achieving narrow spectral linewidths and wavelength tunability, as well as high power emission devices. The last chapter covers the development of surface emitting diode lasers, particularly vertical cavity structures.
In all five chapters, the underlying device physics as well as the state-of-the-art and future trends are discussed. This book introduces the non-expert to the design and fabrication issues involved in the development of these important laser devices. In addition, it reviews the current status of the different material systems and cavity configurations for the benefit of readers engaged in research in this field. Useful background material related to the fundamentals of lasing in semiconductors can be found in the companion volume, Semiconductor Lasers I: Fundamentals.
In all five chapters, the underlying device physics as well as the state-of-the-art and future trends are discussed. This book introduces the non-expert to the design and fabrication issues involved in the development of these important laser devices. In addition, it reviews the current status of the different material systems and cavity configurations for the benefit of readers engaged in research in this field. Useful background material related to the fundamentals of lasing in semiconductors can be found in the companion volume, Semiconductor Lasers I: Fundamentals.