This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
- ISBN13 9783662496817
- Publish Date 22 June 2016
- Publish Status Active
- Publish Country DE
- Publisher Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
- Imprint Springer-Verlag Berlin and Heidelberg GmbH & Co. K
- Edition 1st ed. 2016
- Format Hardcover
- Pages 59
- Language English