Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: * Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials * All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework * Predictive capabilities of device models, discussed with systematic comparisons to experimental results
- ISBN13 9780521516846
- Publish Date 20 January 2011 (first published 1 January 2010)
- Publish Status Active
- Publish Country GB
- Imprint Cambridge University Press
- Format Hardcover
- Pages 488
- Language English