Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (Less Than 250 V) 4h-Sic P(+)N Junction Diodes. Part 1; DC Properties

by National Aeronautics and Space Adm Nasa

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Book cover for Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (Less Than 250 V) 4h-Sic P(+)N Junction Diodes. Part 1; DC Properties

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  • ISBN10 1728883733
  • ISBN13 9781728883731
  • Publish Date 18 October 2018
  • Publish Status Temporarily Withdrawn
  • Imprint Independently Published
  • Format Paperback (US Trade)
  • Pages 26
  • Language English