Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
- ISBN13 9781107635715
- Publish Date 2 May 2013 (first published 13 October 1998)
- Publish Status Inactive
- Out of Print 27 January 2022
- Publish Country GB
- Imprint Cambridge University Press
- Edition 2nd Revised edition
- Format Paperback (US Trade)
- Pages 680
- Language English